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Tailors in Essex Junction, VT

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6 results found

Jeffrey Johnson Essex Junction, VT

Professions & Specialties

Tailor

Experience & Education

United States Patent InventorAppl. No.Assignee

#2013029  Nov 7, 2013

Filed: Jul 3, 2013

Roger W. Cheek (Somers, NY)
Jeffrey B. Johnson (Essex Junction, VT)
Chung H. Lam (Peekskill, NY)
Beth A. Lawrence (Williston, VT)
Michael J. Zierak (Colchester, VT)
13/934625
International Classification: H01L 29/66U.S. Classification: 438302
Patent:
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEATH AN EXTENSION SPACER FOR...
Abstract:
A method to enhance the programmability of a prompt-shift device is provided, which reduces the...

Jeffrey Johnson Essex Junction, VT

Professions & Specialties

Tailor

Experience & Education

United States Patent InventorAppl. No.Assignee

#2012018  Jul 19, 2012

Filed: Mar 26, 2012

Matthew J. Breitwisch (Yorktown Heights, NY)
Roger W. Cheek (Somers, NY)
Jeffrey B. Johnson (Essex Junction, VT)
Chung H. Lam (Peekskill, NY)
Beth A. Rainey (Williston, VT)
Michael J. Zierak (Colchester, VT)
13/430018 INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY)
International Classification: H01L 29/78U.S. Classification: 257408, 257E29266
Patent:
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEATH AN EXTENSION SPACER FOR...
Abstract:
A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The ...

Jeffrey Johnson Essex Junction, VT

Professions & Specialties

Tailor

Experience & Education

United States Patent InventorAppl. No.Assignee

#2012018  Jul 19, 2012

Filed: Mar 26, 2012

Matthew J. Breitwisch (Yorktown Heights, NY)
Roger W. Cheek (Somers, NY)
Jeffrey B. Johnson (Essex Junction, VT)
Chung H. Lam (Peekskill, NY)
Beth A. Rainey (Williston, VT)
Michael J. Zierak (Colchester, VT)
13/429930 INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY)
International Classification: H01L 29/78U.S. Classification: 257408, 257E29266
Patent:
METHOD TO TAILOR LOCATION OF PEAK ELECTRIC FIELD DIRECTLY UNDERNEATH AN EXTENSION SPACER FOR...
Abstract:
A prompt-shift device having reduced programming time in the sub-millisecond range is provided. The ...

Jeffrey Johnson Essex Junction, VT

Professions & Specialties

Tailor

Experience & Education

United States Patent InventorAppl. No.Assignee

#8278197  Oct 2, 2012

Filed: May 30, 2008

Matthew J. Breitwisch (Yorktown Heights, NY)
Roger W. Cheek (Somers, NY)
Jeffrey B. Johnson (Essex Junction, VT)
Chung H. Lam (Peekskill, NY)
Beth A. Rainey (Williston, VT)
Michael J. Zierak (Colchester, VT)
12/130460 International Business Machines Corporation (Armonk, NY)
International Classification: H01L 21/265U.S. Classification: 438519, 438510, 438514, 438527
Patent:
Method to tailor location of peak electric field directly underneath an extension spacer for...
Abstract:
The invention provides a method to enhance the programmability of a prompt-shift device, which...

James Quinlivan Essex Junction, VT

Professions & Specialties

Tailor

Experience & Education

United States Patent InventorAppl. No.Assignee

#6670263  Dec 30, 2003

Filed: Mar 10, 2001

Arne W. Ballantine (Round Lake, NY)
Kevin K. Chan (Staten Island, NY)
Jeffrey D. Gilbert (Burlington, VT)
Kevin M. Houlihan (Boston, MA)
Glen L. Miles (Essex Junction, VT)
James J. Quinlivan (Essex Junction, VT)
Samuel C. Ramac (Poughkeepsie, NY)
Michael B. Rice (Colchester, VT)
Beth A. Ward (Essex Junction, VT)
09/802702 International Business Machines Corporation (Armonk, NY)
International Classification: H01L 213205U.S. Classification: 438592, 438585, 438199, 438287, 438655
Patent:
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon...
Abstract:
Polysilicon electrical depletion in a polysilicon gate electrode is reduced by depositing the...
Claim:
What is claimed is: 1. A CMOS transistor comprising a gate conductor formed on a gate dielectric,...

Glen Miles Essex Junction, VT

Professions & Specialties

Tailor

Experience & Education

United States Patent InventorAppl. No.Assignee

#6670263  Dec 30, 2003

Filed: Mar 10, 2001

Arne W. Ballantine (Round Lake, NY)
Kevin K. Chan (Staten Island, NY)
Jeffrey D. Gilbert (Burlington, VT)
Kevin M. Houlihan (Boston, MA)
Glen L. Miles (Essex Junction, VT)
James J. Quinlivan (Essex Junction, VT)
Samuel C. Ramac (Poughkeepsie, NY)
Michael B. Rice (Colchester, VT)
Beth A. Ward (Essex Junction, VT)
09/802702 International Business Machines Corporation (Armonk, NY)
International Classification: H01L 213205U.S. Classification: 438592, 438585, 438199, 438287, 438655
Patent:
Method of reducing polysilicon depletion in a polysilicon gate electrode by depositing polysilicon...
Abstract:
Polysilicon electrical depletion in a polysilicon gate electrode is reduced by depositing the...
Claim:
What is claimed is: 1. A CMOS transistor comprising a gate conductor formed on a gate dielectric,...







Tailors around Essex Junction, VT

Burlington  (56)
Colchester  (8)
Hyde Park  (1)
Keeseville  (1)
Lewis  (1)
Montpelier  (7)
Plattsburgh  (2)
Richmond  (1)
Shelburne  (1)
Stowe  (1)
Winooski  (1)

Tailors in Vermont